FUN
Sputtered and otherwise deposited a-Si for Fabricating passivated screen- printed contacts for prod
Publieke samenvatting / Public summary
Doelstelling
The overall aim of the project is to provide highly performing photovoltaics and reduce the cost of solar technology. Therefore, we selected the EpiWafer process (epitaxially grown Si wafers) from partner Nexwafe (NXW) to produce highly cost effective Si wafers based on [1] and combine them with a high efficiency silicon solar cell process (proven efficiency 26.1% [2]), based on the approach of passivated contacts, that consist of an interface oxide and a doped polycrystalline silicon layer [3], and screen-printing metallization
Korte omschrijving
Currently no screen-printing metal paste suitable for contacting less than 75 nm thick poly-Si layers without causing large efficiency losses is available [4,5]. In addition, the EpiWafers need for reaching high lifetimes a gettering process [6]. This need for gettering puts an additional function on the polycrystalline Si layers. Therefore, this project develops and characterizes on the one hand a gettering process using polycrystalline Si layers and on the other hand screen-printing metal pastes for contacting doped polycrystalline or amorphous Si layers.
The overall aim of the project is to provide highly performing photovoltaics and reduce the cost of solar technology. Therefore, we selected the EpiWafer process (epitaxially grown Si wafers) from partner Nexwafe (NXW) to produce highly cost effective Si wafers based on [1] and combine them with a high efficiency silicon solar cell process (proven efficiency 26.1% [2]), based on the approach of passivated contacts, that consist of an interface oxide and a doped polycrystalline silicon layer [3], and screen-printing metallization
Korte omschrijving
Currently no screen-printing metal paste suitable for contacting less than 75 nm thick poly-Si layers without causing large efficiency losses is available [4,5]. In addition, the EpiWafers need for reaching high lifetimes a gettering process [6]. This need for gettering puts an additional function on the polycrystalline Si layers. Therefore, this project develops and characterizes on the one hand a gettering process using polycrystalline Si layers and on the other hand screen-printing metal pastes for contacting doped polycrystalline or amorphous Si layers.